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MITSUBISHI Nch POWER MOSFET
FS3KM-18A
HIGH-SPEED SWITCHING USE
FS3KM-18A
OUTLINE DRAWING
10 0.3 6.5 0.3 3 0.3
Dimensions in mm
2.8 0.2
15 0.3
3.2 0.2
14 0.5
3.6 0.3
1.1 0.2 1.1 0.2 0.75 0.15
0.75 0.15
2.54 0.25
2.54 0.25 4.5 0.2 q GATE w DRAIN e SOURCE
123 2.6 0.2
w
VDSS ................................................................................ 900V rDS (ON) (MAX) ................................................................ 4.0 ID ............................................................................................ 3A Viso ................................................................................ 2000V
q
e
TO-220FN
APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM PD Tch Tstg Viso --
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V
Conditions
Ratings 900 30 3 9 30 -55 ~ +150 -55 ~ +150 2000 2
Unit V V A A W C C Vrms g
Feb.1999
AC for 1minute, Terminal to case Typical value
MITSUBISHI Nch POWER MOSFET
FS3KM-18A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter
(Tch = 25C)
Test conditions ID = 1mA, VGS = 0V IGS = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 900V, VGS = 0V ID = 1mA, VDS = 10V ID = 1.5A, VGS = 10V ID = 1.5A, VGS = 10V ID = 1.5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 900 30 -- -- 2 -- -- 2.1 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 3.08 4.62 3.5 770 77 13 15 15 90 25 1.0 -- Max. -- -- 10 1 4 4.00 6.00 -- -- -- -- -- -- -- -- 1.5 4.17
Unit V V A mA V V S pF pF pF ns ns ns ns V C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 200V, ID = 1.5A, VGS = 10V, RGEN = RGS = 50 IS = 1.5A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50 MAXIMUM SAFE OPERATING AREA 101 7 5 3 2 100 7 5 3 2 10-1 7 5 3 2
tw = 10ms 100ms 1ms
POWER DISSIPATION PD (W)
40
30
DRAIN CURRENT ID (A)
10ms 100ms
20
10
TC = 25C Single Pulse
DC
0
0
50
100
150
200
10-2 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V @
5V PD = 30W
CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) 10
PD = 30W VGS = 20V 10V TC = 25C Pulse Test
2.0
DRAIN CURRENT ID (A)
8
DRAIN CURRENT ID (A)
1.6
4.5V
6
5V
1.2
TC = 25C Pulse Test
4
0.8
2
4V
0.4
4V
0
0
10
20
30
40
50
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS3KM-18A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 50
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) ()
TC = 25C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 10
TC = 25C Pulse Test
40
8
30
ID = 6A
6
VGS = 10V 20V
20
3A 1A
4
10
2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 10
TC = 25C VDS = 50V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 7 5
FORWARD TRANSFER ADMITTANCE yfs (S)
DRAIN CURRENT ID (A)
8
3 2 100 7 5 3 2
TC = 25C 75C 125C
6
4
2
VDS = 10V Pulse Test
0
0
4
8
12
16
20
10-1 -1 10
23
5 7 100
23
5 7 101
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 3 2
SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF)
SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101 -1 10 23 5 7 100 23
td(off) Tch = 25C VDD = 200V VGS = 10V RGEN = RGS = 50
103 7 5 3 2 102 7 5 3 2
Ciss
Coss
Crss 101 Tch = 25C 7 f = 1MHZ 5 VGS = 0V 3 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2
tf tr td(on)
5 7 101
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS3KM-18A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 10
VGS = 0V Pulse Test
GATE-SOURCE VOLTAGE VGS (V)
20
Tch = 25C ID = 5A
16
SOURCE CURRENT IS (A)
8
TC = 125C
12
8
VDS = 250V 400V 600V
6
75C 25C
4
4
2
0
0
10
20
30
40
50
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10-1 -50 0 50 100 150
VGS = 10V ID = 1/2ID Pulse Test
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0
VDS = 10V ID = 1mA
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
4.0
3.0
2.0
1.0
0
-50
0
50
100
150
CHANNEL TEMPERATURE Tch (C)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C)
TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D = 1.0 3 0.5 2 100 7 0.1 5 3 2 10-1 7 5 3 2
0.05 0.02 0.01 Single Pulse 0.2
1.2
1.0
0.8
PDM
tw T D= tw T
0.6
0.4
-50
0
50
100
150
10-2 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s)
Feb.1999
CHANNEL TEMPERATURE Tch (C)

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